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| N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=16 APPLICATIONS * Telephone handsets REFER TO ZVN0124A FOR GRAPHS ZVN0120A D G S E-Line TO92 Compatible SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 200 160 2 20 700 -55 to +150 UNIT V mA A V mW C ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25C Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS 200 1 3 20 10 100 500 16 100 85 20 7 7 8 16 8 MAX. UNIT CONDITIONS. V V nA A A mA mS pF pF pF ns ns ns ns ( 2 ) V DD 25V, I D=250mA V DS=25 V, V GS=0V, f=1MHz I D=1mA, V GS=0V ID=1mA, V DS= V GS V GS= 20V, V DS=0V V DS=200 V, V GS=0 V DS=160 V, V GS=0V, T=125C(2) V DS=25 V, V GS=10V V GS=10V,I D=250mA V DS=25V,I D=250mA I D(on) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% 3-349 Sample test. |
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